Differences

This shows you the differences between two versions of the page.

--- foundry:start [2013/12/27 23:09] – azonenberg
+++ foundry:start [2019/12/31 08:27] (current) – mcmaster
@@ Line 1: / Line 1: @@
 A foundry is an IC fabrication facility.
+This page lists all known foundries regardless of whether they are internal-only or offer their services to the public.
 ====== List of foundries ======
 {{topic>foundry}}
-====== BAE Systems ======
-BAE Systems Information and Electronic Systems Integration, Inc. (Manassas, VA)
-BAE Systems Micrwave Electronics Center Nashua (Nashua, NH)
-====== Chartered Semiconductor Manufacturing (CSM) ======
-Acquired by Global Foundries in 2010
-.13 µm
-mm wafers
-Dongbu
-nm to 0.35 um
-"Dongby HiTek's broad and deep semiconductor expertise encompasses High Voltage (HV), Application-Specific Integrated Circuit (ASIC), CMOS Image Sensor (CIS), Digital Signal Processor (DSP), Microcontroller Unit (MCU), and Non-Volatile Memory (e-Flash) devices."
-====== Grace Semiconductor ======
-Processes
-  * 0.25 um
-  * 0.18 um
-  * 0.16 um
-  * 0.15 um
-  * 0.14 um
-  * 0.13 um
-  * 0.115 um
-====== He Jian Technology Corporation (HJTC) ======
-Processes
-  * 0.18 um
-  * 0.25 um
-  * 0.35 um
-  * 8" and 200 mm wafers
-====== Honeywell ======
-Honeywell Aerospace Plymouth (Plymouth, MN)
-HRL Labratories LLC
-Malibu, CA
-====== IBM ======
-Main article
-====== Intersil Corporation ======
-Palm Bay. FL
-====== MagnaChip ======
-Processes
-  * 0.5 um
-  * 0.35 um
-  * 0.30 / 0.25 um
-  * 0.18 / 0.16 um
-  * 0.15 um
-  * 0.13 / 0.11 um
-  * 90 nm
-====== National Semiconducdtor Corporation ======
-  * South Portland, ME
-  * 0.65 um to 0.13 um
-  * CMOS and BiCMOS with SOI, SiGe, and Hi Voltage
-  * Ability to add unique number generator to ID individual dies: 256 bit
-====== NEC ======
-===== Shanghai Hua Hong NEC Electronics Company, Ltd. =====
-  * 1 um
-  * 0.5 um
-  * 0.45 um
-  * 0.35 um
-  * 0.3 um
-  * 0.25 um
-  * 0.18 um
-  * 0.162 um
-  * 0.16 um
-  * 0.13 um
-====== Silterra Malaysia Sdn. Bhd. ======
-Processes
-  * 0.13µm
-  * 0.18µm
-  * 0.22µm
-====== Semiconductor Manufacturing International Corporation (SMIC) ======
-Processes
-    * 350 nm to 45nm
-Foundries
-    * 300mm wafer fabrication facility (fab) and three 200mm wafer fabs in its Shanghai (Mega-fab)
-    * Two 300mm wafer fabs in its Beijing (Mega-fab)
-    * 200mm wafer fab in Tianjin
-    * 200mm wafer fab under construction in Shenzhen
-    * 200mm wafer fab in Chengdu owned by Cension Semiconductor Manufacturing Corporation and managed and operated by SMIC
-    * 300mm wafer fab in Wuhan owned by Wuhan Xinxin Semiconductor Manufacturing Corporation and managed and operated by SMIC
-====== SSMC ======
-.25 um - 0.14 um
-mm and 300 mm wafers
-====== Northrup Gruman ======
-Nortrup Grumman Electronic Systems (Blatimore, MD)
-Northrup Grumman Space Technology (Redondo Beach, CA)
-====== ON Semiconductor ======
-Processes
-  * I3T25 @ 0.35 µm
-  * I3T50 @ 0.35 µm
-  * I3T80 @ 0.35 µm
-  * C5F/C5N @ 0.50 µm
-  * I2T100 @ 0.70 µm
-  * I2T30 @ 0.70 µm
-====== Peregrine ======
-Processes
-  * GA @ 0.25 µm
-  * GC @ 0.25 µm
-  * FA @ 0.50 µm
-  * FC @ 0.50 µm
-====== Rayethon RF Components ======
-Andower, MA
-====== SAMSUN Semiconductor ======
-Processes
-  * 90 nm
-  * 65 nm
-  * 45 nm
-  * 45/40nm
-  * 32/28nm
-mm wafers
-====== Sarnoff Corporation ======
-Princeton, NJ
-====== Semiconductor Manufacturing International Corporation (SMIC) ======
-.35 um to 90nm
-====== Taiwan Semiconductor Manufacturing Company Limited (TSMC) ======
-Produces ICs for many third parties include such large organizations as nVidia.
-TODO: image some nVidia chips to see if we can capture some identifying marks.
-Processes
-  * CLN40/CMN40 @ 40 nm
-  * CLN45/CMN45 @ 45 nm
-  * CLN65/CMN65 @ 65 nm
-  * CLN90/CMN90 @ 90 nm
-  * CL013/CM013 @ 0.13 µm
-  * CL013LP @ 0.13 µm
-  * CL013LV @ 0.13 µm
-  * CL018/CM018 @ 0.18 µm
-  * CL018HV @ 0.18 µm
-  * CL018LP @ 0.18 µm
-  * CL018LV @ 0.18 µm
-  * CL025/CM025 @ 0.25 µm
-  * CL035/CM035 @ 0.35 µm
-  * CL035HV_BCD @ 0.35 µm
-  * CL035HV_DDD @ 0.35 µm
-  * "65 nm, 90 nm, 0.13um, 0.15 / 0.18 µm, 0.22 / 0.25µm, 0.30 / 0.35µm, 0.5 µm"
-{{topic>foundry_tsmc}}
-====== Texas Instruments (TI) ======
-Processes
-  * 32 nm
-  * 45 nm
-  * 90 nm
-  * 130 nm
-  * 200 mm wafers
-====== TowerJazz ======
-Israel: 6” and 8”
-US: 8”
-China "manufacturing partnerships"
-"silicon germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS), silicon BiCMOS, digital CMOS, analog CMOS and RF CMOS technologies"
-====== TriQuint Semiconductor ======
-TriQuint Semiconductor Texas (Richardson, TX)
-====== United Microelectronic Corporation (UMC) ======
-Processes
-  * 28 nm
-  * 40 nm
-  * 65 nm
-  * 90 nm
-  * 0.13 um
-  * 0.15 um
-  * 0.18 um
-  * 0.25 um
-  * 0.35 um
-  * 0.5 um
-  * 0.6 um
-  * 8" wafers
-{{topic>foundry_umc}}
-====== Vanguard International Semiconductor Corporation (VIS) ======
-.18um to 0.5um
-" wafers
-====== X-FAB Semiconductor Foundries ======
-"CMOS; 1.0 - 0.18 µm modular mixed-signal CMOS technologies. BiCMOS; 0.6 µm technology. SOI-CMOS; 0.6 µm & 1.0 µm CMOS and BCD technology on SOI substrates. MEMS Technologies. CUSP"
 ====== References ======
+  - http://smithsonianchips.si.edu/ice/cd/PROF98/JAPAN.PDF
   - http://www.mosis.com/products/fab/schedule/
   - http://www.jazzsemi.com/fact-sheets.html
@@ Line 259: / Line 28: @@
   - http://www.hjtc.com.cn/aboutHJ/PressRelease.asp
   - http://www.hhnec.com/EN/Technology/index.aspx
-  - http://www.ssmc.com.sg/technology_portfolio.asp
   - http://www.ti.com/research/docs/TI_ManufacturingStrategy_WP.pdf
-  - http://www.magnachip.com/eng/product/foundry/proc_portfolio.jsp