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foundry:start [2013/01/22 05:42]
127.0.0.1 external edit 		foundry:start [2015/01/04 22:50]
127.0.0.1 external edit
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 A foundry is an IC fabrication facility. A foundry is an IC fabrication facility.
  
-====== austriamicrosystems (AMS) ======+This page lists all known foundries regardless of whether they are internal-only or offer their services to the public.
  
-Processes +====== List of foundries ======
-C18 @ 0.18 µm +
-H18 @ 0.18 µm +
-C35B4C3 @ 0.35 µm +
-C35B4M3 @ 0.35 µm +
-C35B4O1 @ 0.35 µm +
-H35B4D3 @ 0.35 µm +
-S35D4 @ 0.35 µm+
  
-====== BAE Systems ====== +{{topic>foundry}}
- +
-BAE Systems Information and Electronic Systems Integration, Inc. (Manassas, VA) +
-BAE Systems Micrwave Electronics Center Nashua (Nashua, NH) +
- +
-====== Chartered Semiconductor Manufacturing (CSM) ====== +
- +
-Acquired by Global Foundries in 2010 +
-0.13 µm +
-300 mm wafers +
- +
-Dongbu +
-90 nm to 0.35 um +
-"Dongby HiTek's broad and deep semiconductor expertise encompasses High Voltage (HV), Application-Specific Integrated Circuit (ASIC), CMOS Image Sensor (CIS), Digital Signal Processor (DSP), Microcontroller Unit (MCU), and Non-Volatile Memory (e-Flash) devices." +
- +
-====== GlobalFoundries ====== +
- +
-Processes +
-  * 28nm +
-  * 40nm +
-  * 65nm +
-  * 0.13um/0.11um +
-  * 0.18um +
-  * 0.35um +
- +
-===== Fab 1 - Dresden, Germany ===== +
- +
-  * "45nm and below" +
-  * 300 mm wafer +
- +
-===== Fab 2 - Singapore ===== +
- +
-  * 0.6- to 0.35-micron +
-  * 200 mm wafer +
- +
-===== Fab 3/5 - Singapore ===== +
- +
-  * 0.35-micron to 0.18-micron +
-  * 200 mm wafer +
- +
- +
-===== Fab 3E - Singapore ===== +
- +
-  * 0.18-micron +
-  * 200 mm wafer +
- +
-===== Fab 6 - Singapore ===== +
- +
-  * 0.18- to 0.11-micron +
-  * 200 mm wafer +
- +
-===== Fab 7 - Singapore ===== +
- +
-0.13-micron to 40nm +
- +
-===== Fab 8 - Saratoga County, NY ===== +
- +
-28nm and below +
- +
-====== Grace Semiconductor ====== +
- +
-Processes +
-  * 0.25 um +
-  * 0.18 um +
-  * 0.16 um +
-  * 0.15 um +
-  * 0.14 um +
-  * 0.13 um +
-  * 0.115 um +
- +
-====== He Jian Technology Corporation (HJTC) ====== +
- +
-Processes +
-  * 0.18 um +
-  * 0.25 um +
-  * 0.35 um +
-  * 8" and 200 mm wafers +
- +
-====== Honeywell ====== +
- +
-Honeywell Aerospace Plymouth (Plymouth, MN) +
- +
-HRL Labratories LLC +
- +
-Malibu, CA +
- +
-====== IBM ====== +
- +
-Main article +
- +
-====== Intersil Corporation ====== +
- +
-Palm Bay. FL +
- +
-====== MagnaChip ====== +
- +
-Processes +
-  * 0.5 um +
-  * 0.35 um +
-  * 0.30 / 0.25 um +
-  * 0.18 / 0.16 um +
-  * 0.15 um +
-  * 0.13 / 0.11 um +
-  * 90 nm +
- +
- +
-====== National Semiconducdtor Corporation ====== +
- +
-  * South Portland, ME +
-  * 0.65 um to 0.13 um +
-  * CMOS and BiCMOS with SOI, SiGe, and Hi Voltage +
-  * Ability to add unique number generator to ID individual dies: 256 bit +
- +
-====== NEC ====== +
- +
-===== Shanghai Hua Hong NEC Electronics Company, Ltd. ===== +
- +
-  * 1 um +
-  * 0.5 um +
-  * 0.45 um +
-  * 0.35 um +
-  * 0.3 um +
-  * 0.25 um +
-  * 0.18 um +
-  * 0.162 um +
-  * 0.16 um +
-  * 0.13 um +
- +
-====== Silterra Malaysia Sdn. Bhd. ====== +
- +
-Processes +
-  * 0.13µm +
-  * 0.18µm +
-  * 0.22µm +
- +
-====== Semiconductor Manufacturing International Corporation (SMIC) ====== +
- +
-Processes +
- +
-    * 350 nm to 45nm +
- +
-Foundries +
- +
-    * 300mm wafer fabrication facility (fab) and three 200mm wafer fabs in its Shanghai (Mega-fab) +
-    * Two 300mm wafer fabs in its Beijing (Mega-fab) +
-    * 200mm wafer fab in Tianjin +
-    * 200mm wafer fab under construction in Shenzhen +
-    * 200mm wafer fab in Chengdu owned by Cension Semiconductor Manufacturing Corporation and managed and operated by SMIC +
-    * 300mm wafer fab in Wuhan owned by Wuhan Xinxin Semiconductor Manufacturing Corporation and managed and operated by SMIC +
- +
- +
- +
-====== SSMC ====== +
- +
-0.25 um - 0.14 um +
-200 mm and 300 mm wafers +
- +
-====== Northrup Gruman ====== +
- +
-Nortrup Grumman Electronic Systems (Blatimore, MD) +
-Northrup Grumman Space Technology (Redondo Beach, CA) +
- +
-====== ON Semiconductor ====== +
- +
-Processes +
-  * I3T25 @ 0.35 µm +
-  * I3T50 @ 0.35 µm +
-  * I3T80 @ 0.35 µm +
-  * C5F/C5N @ 0.50 µm +
-  * I2T100 @ 0.70 µm +
-  * I2T30 @ 0.70 µm +
- +
-====== Peregrine ====== +
- +
-Processes +
-  * GA @ 0.25 µm +
-  * GC @ 0.25 µm +
-  * FA @ 0.50 µm +
-  * FC @ 0.50 µm +
- +
-====== Rayethon RF Components ====== +
- +
-Andower, MA +
- +
-====== SAMSUN Semiconductor ====== +
- +
-Processes +
-  * 90 nm +
-  * 65 nm +
-  * 45 nm +
-  * 45/40nm +
-  * 32/28nm +
- +
-300 mm wafers +
- +
-====== Sarnoff Corporation ====== +
- +
-Princeton, NJ +
- +
-====== Semiconductor Manufacturing International Corporation (SMIC) ====== +
- +
-0.35 um to 90nm +
- +
-====== Taiwan Semiconductor Manufacturing Company Limited (TSMC) ====== +
- +
-Produces ICs for many third parties include such large organizations as nVidia. +
-TODO: image some nVidia chips to see if we can capture some identifying marks. +
-Processes +
-  * CLN40/CMN40 @ 40 nm +
-  * CLN45/CMN45 @ 45 nm +
-  * CLN65/CMN65 @ 65 nm +
-  * CLN90/CMN90 @ 90 nm +
-  * CL013/CM013 @ 0.13 µm +
-  * CL013LP @ 0.13 µm +
-  * CL013LV @ 0.13 µm +
-  * CL018/CM018 @ 0.18 µm +
-  * CL018HV @ 0.18 µm +
-  * CL018LP @ 0.18 µm +
-  * CL018LV @ 0.18 µm +
-  * CL025/CM025 @ 0.25 µm +
-  * CL035/CM035 @ 0.35 µm +
-  * CL035HV_BCD @ 0.35 µm +
-  * CL035HV_DDD @ 0.35 µm +
-  * "65 nm, 90 nm, 0.13um, 0.15 / 0.18 µm, 0.22 / 0.25µm, 0.30 / 0.35µm, 0.5 µm" +
- +
-{{topic>foundry_tsmc}} +
- +
-====== Texas Instruments (TI) ====== +
- +
-Processes +
-  * 32 nm +
-  * 45 nm +
-  * 90 nm +
-  * 130 nm +
-  * 200 mm wafers +
- +
-====== TowerJazz ====== +
- +
-Israel: 6” and 8” +
- +
-US: 8” +
- +
-China "manufacturing partnerships" +
- +
-"silicon germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS), silicon BiCMOS, digital CMOS, analog CMOS and RF CMOS technologies" +
- +
-====== TriQuint Semiconductor ====== +
- +
-TriQuint Semiconductor Texas (Richardson, TX) +
- +
-====== United Microelectronic Corporation (UMC) ====== +
- +
-Processes +
-  * 28 nm +
-  * 40 nm +
-  * 65 nm +
-  * 90 nm +
-  * 0.13 um +
-  * 0.15 um +
-  * 0.18 um +
-  * 0.25 um +
-  * 0.35 um +
-  * 0.5 um +
-  * 0.6 um +
-  * 8" wafers +
- +
-{{topic>foundry_umc}} +
- +
-====== Vanguard International Semiconductor Corporation (VIS) ====== +
- +
-0.18um to 0.5um +
- +
-8" wafers +
- +
-====== X-FAB Semiconductor Foundries ====== +
- +
-"CMOS; 1.0 - 0.18 µm modular mixed-signal CMOS technologies. BiCMOS; 0.6 µm technology. SOI-CMOS; 0.6 µm & 1.0 µm CMOS and BCD technology on SOI substrates. MEMS Technologies. CUSP"+
  
 ====== References ====== ====== References ======
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   - http://www.hjtc.com.cn/aboutHJ/PressRelease.asp   - http://www.hjtc.com.cn/aboutHJ/PressRelease.asp
   - http://www.hhnec.com/EN/Technology/index.aspx   - http://www.hhnec.com/EN/Technology/index.aspx
-  - http://www.ssmc.com.sg/technology_portfolio.asp 
   - http://www.ti.com/research/docs/TI_ManufacturingStrategy_WP.pdf   - http://www.ti.com/research/docs/TI_ManufacturingStrategy_WP.pdf
-  - http://www.magnachip.com/eng/product/foundry/proc_portfolio.jsp 
  
 
foundry/start.txt · Last modified: 2019/12/31 08:27 by mcmaster
 
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