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A foundry is an IC fabrication facility.

austriamicrosystems (AMS)

Processes C18 @ 0.18 µm H18 @ 0.18 µm C35B4C3 @ 0.35 µm C35B4M3 @ 0.35 µm C35B4O1 @ 0.35 µm H35B4D3 @ 0.35 µm S35D4 @ 0.35 µm

BAE Systems

BAE Systems Information and Electronic Systems Integration, Inc. (Manassas, VA) BAE Systems Micrwave Electronics Center Nashua (Nashua, NH)

Chartered Semiconductor Manufacturing (CSM)

Acquired by Global Foundries in 2010 0.13 µm 300 mm wafers

Dongbu 90 nm to 0.35 um “Dongby HiTek's broad and deep semiconductor expertise encompasses High Voltage (HV), Application-Specific Integrated Circuit (ASIC), CMOS Image Sensor (CIS), Digital Signal Processor (DSP), Microcontroller Unit (MCU), and Non-Volatile Memory (e-Flash) devices.”

GlobalFoundries

Processes

  • 28nm
  • 40nm
  • 65nm
  • 0.13um/0.11um
  • 0.18um
  • 0.35um

Fab 1 - Dresden, Germany

  • “45nm and below”
  • 300 mm wafer

Fab 2 - Singapore

  • 0.6- to 0.35-micron
  • 200 mm wafer

Fab 3/5 - Singapore

  • 0.35-micron to 0.18-micron
  • 200 mm wafer

Fab 3E - Singapore

  • 0.18-micron
  • 200 mm wafer

Fab 6 - Singapore

  • 0.18- to 0.11-micron
  • 200 mm wafer

Fab 7 - Singapore

0.13-micron to 40nm

Fab 8 - Saratoga County, NY

28nm and below

Grace Semiconductor

Processes

  • 0.25 um
  • 0.18 um
  • 0.16 um
  • 0.15 um
  • 0.14 um
  • 0.13 um
  • 0.115 um

He Jian Technology Corporation (HJTC)

Processes

  • 0.18 um
  • 0.25 um
  • 0.35 um
  • 8“ and 200 mm wafers

Honeywell

Honeywell Aerospace Plymouth (Plymouth, MN)

HRL Labratories LLC

Malibu, CA

IBM

Main article

Intersil Corporation

Palm Bay. FL

MagnaChip

Processes

  • 0.5 um
  • 0.35 um
  • 0.30 / 0.25 um
  • 0.18 / 0.16 um
  • 0.15 um
  • 0.13 / 0.11 um
  • 90 nm

National Semiconducdtor Corporation

  • South Portland, ME
  • 0.65 um to 0.13 um
  • CMOS and BiCMOS with SOI, SiGe, and Hi Voltage
  • Ability to add unique number generator to ID individual dies: 256 bit

NEC

Shanghai Hua Hong NEC Electronics Company, Ltd.

  • 1 um
  • 0.5 um
  • 0.45 um
  • 0.35 um
  • 0.3 um
  • 0.25 um
  • 0.18 um
  • 0.162 um
  • 0.16 um
  • 0.13 um

Silterra Malaysia Sdn. Bhd.

Processes

  • 0.13µm
  • 0.18µm
  • 0.22µm

Semiconductor Manufacturing International Corporation (SMIC)

Processes

  • 350 nm to 45nm

Foundries

  • 300mm wafer fabrication facility (fab) and three 200mm wafer fabs in its Shanghai (Mega-fab)
  • Two 300mm wafer fabs in its Beijing (Mega-fab)
  • 200mm wafer fab in Tianjin
  • 200mm wafer fab under construction in Shenzhen
  • 200mm wafer fab in Chengdu owned by Cension Semiconductor Manufacturing Corporation and managed and operated by SMIC
  • 300mm wafer fab in Wuhan owned by Wuhan Xinxin Semiconductor Manufacturing Corporation and managed and operated by SMIC

SSMC

0.25 um - 0.14 um 200 mm and 300 mm wafers

Northrup Gruman

Nortrup Grumman Electronic Systems (Blatimore, MD) Northrup Grumman Space Technology (Redondo Beach, CA)

ON Semiconductor

Processes

  • I3T25 @ 0.35 µm
  • I3T50 @ 0.35 µm
  • I3T80 @ 0.35 µm
  • C5F/C5N @ 0.50 µm
  • I2T100 @ 0.70 µm
  • I2T30 @ 0.70 µm

Peregrine

Processes

  • GA @ 0.25 µm
  • GC @ 0.25 µm
  • FA @ 0.50 µm
  • FC @ 0.50 µm

Rayethon RF Components

Andower, MA

SAMSUN Semiconductor

Processes

  • 90 nm
  • 65 nm
  • 45 nm
  • 45/40nm
  • 32/28nm

300 mm wafers

Sarnoff Corporation

Princeton, NJ

Semiconductor Manufacturing International Corporation (SMIC)

0.35 um to 90nm

Taiwan Semiconductor Manufacturing Company Limited (TSMC)

Produces ICs for many third parties include such large organizations as nVidia. TODO: image some nVidia chips to see if we can capture some identifying marks. Processes

  • CLN40/CMN40 @ 40 nm
  • CLN45/CMN45 @ 45 nm
  • CLN65/CMN65 @ 65 nm
  • CLN90/CMN90 @ 90 nm
  • CL013/CM013 @ 0.13 µm
  • CL013LP @ 0.13 µm
  • CL013LV @ 0.13 µm
  • CL018/CM018 @ 0.18 µm
  • CL018HV @ 0.18 µm
  • CL018LP @ 0.18 µm
  • CL018LV @ 0.18 µm
  • CL025/CM025 @ 0.25 µm
  • CL035/CM035 @ 0.35 µm
  • CL035HV_BCD @ 0.35 µm
  • CL035HV_DDD @ 0.35 µm
  • “65 nm, 90 nm, 0.13um, 0.15 / 0.18 µm, 0.22 / 0.25µm, 0.30 / 0.35µm, 0.5 µm”

Texas Instruments (TI)

Processes

  • 32 nm
  • 45 nm
  • 90 nm
  • 130 nm
  • 200 mm wafers

TowerJazz

Israel: 6” and 8”

US: 8”

China “manufacturing partnerships”

“silicon germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS), silicon BiCMOS, digital CMOS, analog CMOS and RF CMOS technologies”

TriQuint Semiconductor

TriQuint Semiconductor Texas (Richardson, TX)

United Microelectronic Corporation (UMC)

Processes

  • 28 nm
  • 40 nm
  • 65 nm
  • 90 nm
  • 0.13 um
  • 0.15 um
  • 0.18 um
  • 0.25 um
  • 0.35 um
  • 0.5 um
  • 0.6 um
  • 8” wafers

Vanguard International Semiconductor Corporation (VIS)

0.18um to 0.5um

8“ wafers

X-FAB Semiconductor Foundries

“CMOS; 1.0 - 0.18 µm modular mixed-signal CMOS technologies. BiCMOS; 0.6 µm technology. SOI-CMOS; 0.6 µm & 1.0 µm CMOS and BCD technology on SOI substrates. MEMS Technologies. CUSP”

References

 
foundry/start.1343493470.txt.gz · Last modified: 2013/01/22 05:38 (external edit)
 
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