Differences

This shows you the differences between two versions of the page.

--- mcmaster:raspberry-pi:rp2-b0 [2021/01/30 22:06] – [Die] mcmaster
+++ mcmaster:raspberry-pi:rp2-b0 [2025/08/04 21:23] (current) – external edit 127.0.0.1
@@ Line 27: / Line 27: @@
 </code>
-[[https://siliconpr0n.org/map/raspberry-pi/rp2-b0/mz_mit20x/|mz_mit20x]]
+[[https://siliconprawn.org/map/raspberry-pi/rp2-b0/mcmaster_mz_mit20x/|mz_mit20x]]
-    * [[https://siliconpr0n.org/map/raspberry-pi/rp2-b0/single/raspberry-pi_rp2-b0_mz_mit20x.jpg|Single]] (4861x4721, 8171000B)
+    * [[https://siliconprawn.org/map/raspberry-pi/rp2-b0/single/raspberry-pi_rp2-b0_mcmaster_mz_mit20x.jpg|Single]] (4861x4721, 8171000B)
-[[https://siliconpr0n.org/map/raspberry-pi/rp2-b0/s1-9_mit20x/|s1-9_mit20x]]
+[[https://siliconprawn.org/map/raspberry-pi/rp2-b0/mcmaster_s1-9_mit20x/|s1-9_mit20x]]
-    * [[https://siliconpr0n.org/map/raspberry-pi/rp2-b0/single/raspberry-pi_rp2-b0_s1-9_mit20x.jpg|Single]] (4932x4798, 7180040B)
+    * [[https://siliconprawn.org/map/raspberry-pi/rp2-b0/single/raspberry-pi_rp2-b0_mcmaster_s1-9_mit20x.jpg|Single]] (4932x4798, 7180040B)
-[[https://siliconpr0n.org/map/raspberry-pi/rp2-b0/s1-9_vc60x/|s1-9_vc60x]]
+[[https://siliconprawn.org/map/raspberry-pi/rp2-b0/mcmaster_s1-9_vc60x/|s1-9_vc60x]]
-    * [[https://siliconpr0n.org/map/raspberry-pi/rp2-b0/single/raspberry-pi_rp2-b0_s1-9_vc60x.jpg|Single]] (14876x14436, 38.8783MiB)
+    * [[https://siliconprawn.org/map/raspberry-pi/rp2-b0/single/raspberry-pi_rp2-b0_mcmaster_s1-9_vc60x.jpg|Single]] (14876x14436, 38.8783MiB)
-^ Etch step ^ Process ^ Notes ^
+^ Process step  ^ Process                                        ^ Notes                                                                                                                      ^
-|  |  |  |
+| s1-1          | 2 min 20% hf\\ 2 min hcl/h2o2                  | minor corrosion on top metal                                                                                               |
-|  |  |  |
+| s1-2          | 2 min 20% hf\\ 1 min hcl/h2o2\\ 2 min barrier  |                                                                                                                            |
-|  |  |  |
+| s1-3          | 3 min 20% hf\\ 2 min barrier\\ 4 min hcl/h2o2  | misc process issues causing unintended times\\ significant top metal erosion of some sort\\ see stringers floating around  |
-|  |  |  |
+| s1-4          | 3 min 20% hf\\ 2 min hcl/h2o2\\ 4 min barrier  | significant erosion into oxide\\ looks like maybe some wax residue on die?\\ Gentle IPA scrub w/ foam tip removed it       |
-|  |  |  |
+| s1-5          | 2 min 20% hf\\ 2 min hcl/h2o2\\ 4 min barrier  | much more etching\\ lots of transistors exposed\\ keep going at this cadence\\ scrubbed die again to remove residue        |
-|  |  |  |
+| s1-6          | 2 min 20% hf\\ 2 min hcl/h2o2\\ 4 min barrier  |                                                                                                                            |
-|  |  |  |
+| s1-7          | 2 min 20% hf\\ 2 min hcl/h2o2\\ no barrier     | Getting close to done\\ No barrier and no residue\\ Barrier etch must be eating wax                                        |
-|  |  |  |
+| s1-8          | 2 min 20% hf\\ 2 min hcl/h2o2\\ no barrier     | getting close to done                                                                                                      |
-|  |  |  |
+| s1-9          | 2 min 20% hf\\ 2 min hcl/h2o2\\ no barrier     | Very small oxide left\\ Call it good enough                                                                                |