Differences

This shows you the differences between two versions of the page.

--- bipolar:start [2014/05/29 05:24] – [References] mcmaster
+++ bipolar:start [2016/01/03 06:29] (current) – mcmaster
@@ Line 1: / Line 1: @@
+FIXME: cleanup
 This page is very research orientated and information on it should not be trusted.
 TODO: this page should eventually have only compound logic gates, but is currently a sandbox for basic components. I'd like to substitute out these pictures for ones free of copyright issues to avoid any potential issues.
@@ Line 51: / Line 53: @@
 {{:mcmaster:bipolar:buried_shadow_enhanced.jpg?w=200|}}
+====== Bipolar transistor ======
+[[bipolar:start|Main page]]
+{{gallery>:image:bjt_labeled.png}}
+|{{gallery>:image:BJT__transistor_2.png}}|
+|Contacts from left to right: collector, emitter, base. The collector forms the bulk of the well. Assuming its an NPN (which it may or may not be), you can also see the p-isolation in blueish-green around the edges. The base forms the larger white area around the emitter. Traces of the metal contacts can be seen as darker regions on the collector's pink area.|
+{{gallery>:image:john_mcmaster_unknown_to-3_thick_0_bonding.jpg}}
+Discrete bipolar transistor from TO-3 package.
+Another bipolar description: http://zeptobars.ru/en/read/ULN2003-per-element-die-annotation
+====== Mesa transistor ======
+{{gallery>:image:john_mcmaster_ti_980286_mesa_emphasis.jpg}}
+{{gallery>:image:john_mcmaster_ti_980286_mesa_overview.jpg}}
+Diffusion transistor. Does not use photolithography. Above image shows the mesa shape versus other transistor which were more or less flat.
+Name comes from the physical mesa shape. Indications that this is because of the component geometries, but also read something that indicated its because they used acid (probably HF) to etch it out and it gets the shape because it etches more on the top by the time it gets to the bottom. Modern dicing is either through scribing or sawing.
+====== Planar transistor ======
+Uses photolithography to print transistors. Has SiO2 passivation. Significantly reduced cost and significant increase in quality.
+====== Diffusion transistor ======
+Wafer is put into a high temperature oven and doped by gas diffusing into the silicon.
+====== Lateral transistor ======
+"It is the world's worst transistor, you couldn't sell it as a discrete component: low cutoff frequency, very limited current range and an inferior noise figure. But no self-respecting analog IC designer would want to be without it. The reason: In either a CMOS or bipolar process no additional diffusions are required." ["Designing Analog Chips", Hans Camenzind]
@@ Line 58: / Line 96: @@
   - UC Berkeley EE 105 Microelectronics: inst.eecs.berkeley.edu/~ee105/fa06/lectures/F06-Lecture21-BJT.pdf
   - http://www.righto.com/2014/05/reverse-engineering-tl431-most-common.html
+  - http://translate.googleusercontent.com/translate_c?depth=1&hl=en&prev=/search%3Fq%3Dhttp://privatfrickler.de/blick-auf-den-chip-im-toslink-empfanger-sharp-gp1fav51rk0f-hochaufgelostes-panorama/%26num%3D20%26client%3Dubuntu%26hs%3DFqZ%26channel%3Dfs&rurl=translate.google.com&sl=de&u=http://www.halbleiter.org/grundlagen/bipolar/&usg=ALkJrhiaFxbKGM6VtmAh1BlHUlrt_Aas1g