Differences

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--- components [2012/03/18 10:16] – azonenberg
+++ components [2013/10/20 14:59] (current) – external edit 127.0.0.1
@@ Line 11: / Line 11: @@
 {{gallery>image:bond_pad.jpg}}
-======   ======
+See [[pad|main article]]
-Connects bonding wires to the die. Large metal pads so the wire can be attached without high precision. The inner box is the overglass covering part of the aluminium so as to be able to make a good contact and still maintain a good seal.
-Still has a bond wire on it:
-{{gallery>image:overglass_1.jpg}}
-Damaged overglass:
-[[image:damaged_overglass.jpg]]
-It is very fragile and can easily get completely stripped during decapsulation.
-Aluminium (M1) errosion from excessive time in acid bath:
-{{gallery>image:overglass_acid_seep.jpg}}
 ====== Straining ======
@@ Line 85: / Line 71: @@
 ====== Substrate ======
-The majority of the mass of the die. Some sort of SiO2 varient. Generally fairly boring and not much worth noting.
+The majority of the mass of the die. Usually just a large block of silicon. The surface of a CMOS wafer is typically oriented along the <100> direction, many bipolar devices use <111>. <110> wafers are usually only seen in specialized applications such as MEMS.
+Generally fairly boring and not much worth noting.
 ====== References ======