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delayer:rie [2014/01/20 07:22] – mcmasterdelayer:rie [2014/04/23 10:07] (current) – [13.56 MHz] mne
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 [Optimization of IEP] says "An adequate amount of ion energy is an important component because it contributes to the sputtering capability of the plasma…The removal of fluorine and other contaminates such as oxides, metal salts, magnesium and lead are enhanced by the physical component of ionic bombardment…However, excess energy can result in unwanted results such as sputtering of the bond-pad site…Therefore, it is necessary to maintain a narrow energy range for control purposes.  As Fig. 1 indicates, this is accomplished at higher frequencies such as 13.56MHz." [Optimization of IEP] says "An adequate amount of ion energy is an important component because it contributes to the sputtering capability of the plasma…The removal of fluorine and other contaminates such as oxides, metal salts, magnesium and lead are enhanced by the physical component of ionic bombardment…However, excess energy can result in unwanted results such as sputtering of the bond-pad site…Therefore, it is necessary to maintain a narrow energy range for control purposes.  As Fig. 1 indicates, this is accomplished at higher frequencies such as 13.56MHz."
 +
 +mne: I had a phone call with a tech at plasma.de: Lower frequency systems (i.e. 40kHz) are typically used for plasma cleaning and the plasma energy is pretty low. For RIE systems and especially for corrosive plasma processes, the use of RF plasma (i.e. 13.56 MHz) with a matching network is recommended. With a low frequency system, it will work as well, but according to the tech, it will take way longer.
  
 ===== 2.45 GHz Microwave ===== ===== 2.45 GHz Microwave =====
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 [Plasma Etching Outline]: "Copper does not form any volatile compounds with known plasma etch gases, and therefore cannot be RIE etched.  Copper can be sputter etched, but this technique has no selectivity.  Contamination of the fab with copper is serious concern.  The Damascene process has become an attractive enabling method for patterning copper by CMP." [Plasma Etching Outline]: "Copper does not form any volatile compounds with known plasma etch gases, and therefore cannot be RIE etched.  Copper can be sputter etched, but this technique has no selectivity.  Contamination of the fab with copper is serious concern.  The Damascene process has become an attractive enabling method for patterning copper by CMP."
 +
 +
 +===== Al =====
 +
 +[[http://books.google.com/books?id=ZzmtGEHCC9MC&pg=PA530&lpg=PA530&dq=aluminum+plasma+etch+chemistry&source=bl&ots=YgkADduVbg&sig=0FeX9NwFgg5I756YdjFBS3YptwI&hl=en&sa=X&ei=PC_zUpmuIsrZkQfVvIGACw&ved=0CEAQ6AEwAg#v=onepage&q=aluminum%20plasma%20etch%20chemistry&f=false|Plasma Chemistry]]
 +  * Anisotrphic etching requires inhibotors/addaditives to main Cl2 feed like CCl4, CHCl3, SiCl4, BCl3
 +  * Water is bad.  Add BCl3 or SiCl4 to suppress it
 +  * 3 nm metal oxide film must be punctured to etch metal
 +    * Al2O3 is extremely chemically resistant.  Use physical bombardment to remove it initially
 +
 +
  
 ====== Off the shelf gas sources ====== ====== Off the shelf gas sources ======
delayer/rie.1390202554.txt.gz · Last modified: 2014/01/20 07:22 by mcmaster