Differences

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--- fet [2016/01/03 07:44] – [MOS 6522] mcmaster
+++ fet [2016/01/03 08:02] (current) – [Xilinx XC2018] mcmaster
@@ Line 44: / Line 44: @@
 Some of contact metal can be seen on the bottom but the gate itself is poly.  The [[:cmos|CMOS page]] details its use in an inverter
+==== Xilinx XC2018 ====
+{{:mcmaster:xilinx:xc2018:q.jpg?150|}}
+Similar process to the SecurID.  Left middle has a via to poly.  The poly extends right over an active area to form a transistor.  The active area has contacts at top and bottom.
@@ Line 75: / Line 82: @@
 ==== MOS MPS7083 ====
-{{:mcmaster:mos:mps7083:q_mz.jpg?300}}
+{{:mcmaster:mos:mps7083:q_mz.jpg?150}}
-{{:mcmaster:mos:mps7083:q_dlyr1.jpg?300}}
+{{:mcmaster:mos:mps7083:q_dlyr1.jpg?150}}
 Above top: top metal.  Bottom: Al and some SiO2 removed w/ SiO2 thin film interference showing oxide thickness
@@ Line 92: / Line 99: @@
 ==== Fairchild CD4011 ====
-{{:image:fairchild_4011_transistor.jpg?300}}
+{{:image:fairchild_4011_transistor.jpg?150}}
-{{:image:cmos_metal_gate_transistor_no_metal.jpg?300}}
+{{:image:cmos_metal_gate_transistor_no_metal.jpg?150}}
 Above top: original transistor.  Bottom: very siimlar delayered transistor