User Tools

Site Tools


fet

Differences

This shows you the differences between two versions of the page.

Link to this comparison view

Both sides previous revisionPrevious revision
Next revision
Previous revision
fet [2016/01/03 07:45] – [MOS MPS7083] mcmasterfet [2016/01/03 08:02] (current) – [Xilinx XC2018] mcmaster
Line 44: Line 44:
  
 Some of contact metal can be seen on the bottom but the gate itself is poly.  The [[:cmos|CMOS page]] details its use in an inverter Some of contact metal can be seen on the bottom but the gate itself is poly.  The [[:cmos|CMOS page]] details its use in an inverter
 +
 +
 +==== Xilinx XC2018 ====
 +
 +{{:mcmaster:xilinx:xc2018:q.jpg?150|}}
 +
 +Similar process to the SecurID.  Left middle has a via to poly.  The poly extends right over an active area to form a transistor.  The active area has contacts at top and bottom.
  
  
Line 92: Line 99:
 ==== Fairchild CD4011 ==== ==== Fairchild CD4011 ====
  
-{{:image:fairchild_4011_transistor.jpg?300}}+{{:image:fairchild_4011_transistor.jpg?150}}
  
-{{:image:cmos_metal_gate_transistor_no_metal.jpg?300}}+{{:image:cmos_metal_gate_transistor_no_metal.jpg?150}}
  
 Above top: original transistor.  Bottom: very siimlar delayered transistor Above top: original transistor.  Bottom: very siimlar delayered transistor
fet.1451807108.txt.gz · Last modified: 2016/01/03 07:45 by mcmaster