physical_protection
Differences
This shows you the differences between two versions of the page.
Next revision | Previous revision | ||
physical_protection [2012/02/21 01:36] – created mcmaster | physical_protection [2014/01/15 14:23] (current) – [LOPPER] azonenberg | ||
---|---|---|---|
Line 12: | Line 12: | ||
Obscurification techniques to make analyzing die images difficult. Most common is to make wires into a maze such that a human would get confused tracing them. However, computer aided techniques are largely immune to this. | Obscurification techniques to make analyzing die images difficult. Most common is to make wires into a maze such that a human would get confused tracing them. However, computer aided techniques are largely immune to this. | ||
- | ====== Chemical protection ====== | ||
- | Very rare. I've been told that some high end military chips may have a thin layer of alkali metal put into them. The idea being if exposed to most techniques, it will react violently and destroy the chip. With proper chemical treatment and machining, such high end chip protections can usually be avoided. It may be best to destroy one chip to analyze protections and then attacking the actual chip to be imaged/ | ||
====== UV metal shielding ====== | ====== UV metal shielding ====== | ||
Line 19: | Line 17: | ||
====== Die ID ====== | ====== Die ID ====== | ||
- | National | + | |
+ | National, Xilinx, and many other vendors | ||
+ | |||
+ | ====== Physical self-destructs ====== | ||
+ | |||
+ | ===== Chemical protection ===== | ||
+ | Very rare. I've been told that some high end military chips may have a thin layer of alkali metal put into them. The idea being if exposed to most techniques, it will react violently and destroy the chip. With proper chemical treatment and machining, such high end chip protections can usually be avoided. It may be best to destroy one chip to analyze protections and then attacking the actual chip to be imaged/ | ||
+ | |||
+ | We've read that some mil chips can have alkali metals to react with the strong acids typically used during decapsulation. | ||
+ | |||
+ | In our assessment, while it may look interesting at a first glance this is very unlikely to be used in practice simply because alkali metals diffuse very fast and destroy CMOS devices. The problems involved in keeping them separate are likely to be great enough that an alternative self-destruct method would be used. | ||
+ | |||
+ | ===== Connoisseur Coating ===== | ||
+ | |||
+ | Developed by LLNL as part of the " | ||
+ | |||
+ | It's not clear what this material is. Various public sources give conflicting definitions: | ||
+ | * A [[http:// | ||
+ | * [[http:// | ||
+ | ===== Explosive ===== | ||
+ | |||
+ | ==== LOPPER ==== | ||
+ | |||
+ | LOPPER was an experimental program to plant "tiny, non-violent, | ||
+ | |||
+ | They conclude by saying they are currently in pursuit of " | ||
+ | |||
+ | [[http:// | ||
+ | ==== Guesses ==== | ||
+ | |||
+ | NanoFoil maybe? | ||
+ | * http:// | ||
+ | * http:// | ||
+ | |||
+ | Would react explosively with all wet decap chemistries we're aware of. MSDS and safety documentation suggests it's sensitive to physical shock and heat as well (though perhaps not quite as much as, say, flash powder). | ||
+ | |||
+ | Much safer to the chip (until detonated) than alkali metals since it's based on heavy metals (Ni and Al) which don't diffuse nearly as easily. Could be treated much like a conventional metalization layer from the fab's perspective. | ||
+ | |||
+ | Without reading too much on the chemistry, it looks like it'd be triggered by heating regardless of the presence of oxygen. This means that even plasma-based etches would have to be done very carefully and slowly to prevent heating the sample to the point of detonation. | ||
+ | |||
+ | The best way of defeating such protection | ||
+ | - Mill package to just above bond wires | ||
+ | - Slow SF6 + O2 plasma etch to remove remainder of packaging compound. (A typical RIE process for SiO2 given in "Etch Rates for Micromachining Processes, pt 2" uses 25sccm of SF6. Adding 10sccm of O2 increases the etch rate against SiO2 as well as making | ||
+ | - Ni seems to lack any good RIE chemistries. The best option for removing the actual metal layers is likely a very dilute (1% or less) HCl solution, which will attack both Ni and Al while keeping the etch slow and cool. Toward the end it will be critical to avoid attacking aluminum/ | ||
+ | |||
====== Patents ====== | ====== Patents ====== | ||
Line 28: | Line 71: | ||
- Hacking the PIC 18F1320: http:// | - Hacking the PIC 18F1320: http:// | ||
- http:// | - http:// | ||
+ | - A history of US COMSEC: http:// | ||
physical_protection.1329788188.txt.gz · Last modified: 2013/10/20 14:59 (external edit)