physical_protection
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physical_protection [2012/06/19 04:14] – [Chemical protection] azonenberg | physical_protection [2014/01/15 14:23] (current) – [LOPPER] azonenberg | ||
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====== Die ID ====== | ====== Die ID ====== | ||
- | National claims they have some sort of anti-reverse engineering protection with their die ID scheme. Who knows if it does anything useful. | ||
- | ====== | + | National, Xilinx, and many other vendors have unique per-chip serial numbers stored in some sort of OTP memory on the chip. The user's firmware presumably uses this in a licensing scheme. Might make for a halfway decent anti-cloning system (until the check is found and nopped out) but is useless for preventing RE. |
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+ | ====== | ||
===== Chemical protection ===== | ===== Chemical protection ===== | ||
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In our assessment, while it may look interesting at a first glance this is very unlikely to be used in practice simply because alkali metals diffuse very fast and destroy CMOS devices. The problems involved in keeping them separate are likely to be great enough that an alternative self-destruct method would be used. | In our assessment, while it may look interesting at a first glance this is very unlikely to be used in practice simply because alkali metals diffuse very fast and destroy CMOS devices. The problems involved in keeping them separate are likely to be great enough that an alternative self-destruct method would be used. | ||
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+ | ===== Connoisseur Coating ===== | ||
+ | |||
+ | Developed by LLNL as part of the " | ||
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+ | It's not clear what this material is. Various public sources give conflicting definitions: | ||
+ | * A [[http:// | ||
+ | * [[http:// | ||
===== Explosive ===== | ===== Explosive ===== | ||
+ | |||
+ | ==== LOPPER ==== | ||
+ | |||
+ | LOPPER was an experimental program to plant "tiny, non-violent, | ||
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+ | They conclude by saying they are currently in pursuit of " | ||
+ | |||
+ | [[http:// | ||
+ | ==== Guesses ==== | ||
NanoFoil maybe? | NanoFoil maybe? | ||
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- Slow SF6 + O2 plasma etch to remove remainder of packaging compound. (A typical RIE process for SiO2 given in "Etch Rates for Micromachining Processes, pt 2" uses 25sccm of SF6. Adding 10sccm of O2 increases the etch rate against SiO2 as well as making it attack organics like photoresist. Since typical chip encapsulation is ~80% by wt of SiO2 microspheres in an organic epoxy matrix, this is a desirable side effect.) | - Slow SF6 + O2 plasma etch to remove remainder of packaging compound. (A typical RIE process for SiO2 given in "Etch Rates for Micromachining Processes, pt 2" uses 25sccm of SF6. Adding 10sccm of O2 increases the etch rate against SiO2 as well as making it attack organics like photoresist. Since typical chip encapsulation is ~80% by wt of SiO2 microspheres in an organic epoxy matrix, this is a desirable side effect.) | ||
- Ni seems to lack any good RIE chemistries. The best option for removing the actual metal layers is likely a very dilute (1% or less) HCl solution, which will attack both Ni and Al while keeping the etch slow and cool. Toward the end it will be critical to avoid attacking aluminum/ | - Ni seems to lack any good RIE chemistries. The best option for removing the actual metal layers is likely a very dilute (1% or less) HCl solution, which will attack both Ni and Al while keeping the etch slow and cool. Toward the end it will be critical to avoid attacking aluminum/ | ||
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====== Patents ====== | ====== Patents ====== | ||
US5468990: Structures for Preventing Reverse Engineering of Integrated Circuits | US5468990: Structures for Preventing Reverse Engineering of Integrated Circuits | ||
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- Hacking the PIC 18F1320: http:// | - Hacking the PIC 18F1320: http:// | ||
- http:// | - http:// | ||
+ | - A history of US COMSEC: http:// | ||
physical_protection.1340079248.txt.gz · Last modified: 2013/10/20 14:59 (external edit)