Differences

This shows you the differences between two versions of the page.

--- piranha_solution [2013/11/17 07:03] – mcmaster
+++ piranha_solution [2013/11/17 07:08] (current) – mcmaster
@@ Line 17: / Line 17: @@
   * "spin-on polyimide >17,000 nm/min"
   * "Oxygen plasma eats polyimide at 370nm/min and is "slow or zero" for Cu/Al"
+"The Piranha (also known as sulfuric-peroxide)
+parts 96% H SO :1 part 30% H O .
+used here is a mix of
+. The hydrogen peroxide is added just before use.
+It is used as a cleaning solution that strips organics and some
+metals. In these tests, it was indeed found to etch photoresist,
+the resist pen, and polyimide very rapidly, but only slowly
+attacked the Parylene C. It also etched aluminum, nickel, and
+silver rapidly. Chromium was etched slowly, which allows it to
+be used for the cleaning of photomasks." [Etch rates part II]
 ====== References ======
-Acid comaptible materials (AMC): http://www.cheresources.com/invision/topic/19132-piranha-caros-acid-peroxymonosulfuric-acid-compatible-materials/
+  * Acid comaptible materials (AMC): http://www.cheresources.com/invision/topic/19132-piranha-caros-acid-peroxymonosulfuric-acid-compatible-materials/
+  * [[http://microlab.berkeley.edu/labmanual/chap1/JMEMSEtchRates2(2003).pdf|Etch rates part II]]