Differences

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--- transistor:start [2013/10/20 14:59] – external edit 127.0.0.1
+++ transistor:start [2016/01/03 06:14] (current) – removed mcmaster
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-====== Point-contact transistor ======
-First kind of transistor ever constructed
-====== Bipolar junction transistor (BJT) ======
-====== Heterojunction bipolar transistor, up to several hundred GHz, common in modern ultrafast and RF circuits ======
-====== Grown-junction transistor, first kind of BJT ======
-====== Alloy-junction transistor, improvement of grown-junction transistor ======
-======Micro-alloy transistor (MAT), speedier than alloy-junction transistor =======
-======Micro-alloy diffused transistor (MADT), speedier than MAT, a diffused-base transistor =======
-======Post-alloy diffused transistor (PADT), speedier than MAT, a diffused-base transistor =======
-======Schottky transistor =======
-======Surface barrier transistor =======
-====== Drift-field transistor ======
-====== Avalanche transistor ======
-====== Darlington transistor ======
-Two BJTs connected together to provide a high current gain equal to the product of the current gains of the two transistors.
-====== Insulated gate bipolar transistors (IGBTs) ======
-use a medium power IGFET, similarly connected to a power BJT, to give a high input impedance. Power diodes are often connected between certain terminals depending on specific use. IGBTs are particularly suitable for heavy-duty industrial applications. The Asea Brown Boveri (ABB) 5SNA2400E170100 illustrates just how far power semiconductor technology has advanced.[18] Intended for three-phase power supplies, this device houses three NPN IGBTs in a case measuring 38 by 140 by 190 mm and weighing 1.5 kg. Each IGBT is rated at 1,700 volts and can handle 2,400 amperes.
-====== Photo transistor ======
-====== Field-effect transistor ======
-====== Carbon nanotube field-effect transistor (CNFET) ======
-====== JFET, where the gate is insulated by a reverse-biased PN junction ======
-====== MESFET ======
-Similar to JFET with a Schottky junction instead of PN one
-======High Electron Mobility Transistor (HEMT, HFET, MODFET) =======
-====== MOSFET ======
-Where the gate is insulated by a shallow layer of insulator
-====== Inverted-T field effect transistor (ITFET) ======
-====== FinFET ======
-Source/drain region shapes fins on the silicon surface.
-====== FREDFET, fast-reverse epitaxial diode field-effect transistor ======
-====== Thin film transistor, in LCDs. ======
-====== OFET Organic Field-Effect Transistor, in which the semiconductor is an organic compound ======
-====== Ballistic transistor ======
-====== Floating-gate transistor, for non-volatile storage. ======
-====== FETs used to sense environment ======
-======Ion-sensitive field effect transistor, to measure ion concentrations in solution. =======
-======EOSFET, electrolyte-oxide-semiconductor field effect transistor (Neurochip) =======
-======DNAFET, deoxyribonucleic acid field-effect transistor =======
-====== Spacistor ======
-====== Diffusion transistor ======
-Formed by diffusing dopants into semiconductor substrate; can be both BJT and FET
-====== Unijunction transistor ======
-Can be used as simple pulse generators. They comprise a main body of either P-type or N-type semiconductor with ohmic contacts at each end (terminals Base1 and Base2). A junction with the opposite semiconductor type is formed at a point along the length of the body for the third terminal (Emitter).  ======
-====== Single-electron transistors (SET) ======
-Consist of a gate island between two tunnelling junctions. The tunnelling current is controlled by a voltage applied to the gate through a capacitor.  ======
-====== Nanofluidic transistor ======
-Controls the movement of ions through sub-microscopic, water-filled channels. Nanofluidic transistor, the basis of future chemical processors  ======
-====== Multigate devices ======
-====== Tetrode transistor ======
-====== Pentode transistor ======
-====== Multigate device ======
-====== Trigate transistors (Prototype by Intel) ======
-====== Dual gate FETs have a single channel with two gates in cascode; a configuration optimized for high frequency amplifiers, mixers, and oscillators. ======
-====== Junctionless Nanowire Transistor (JNT) ======
-====== References ======
-List ripped off of http://en.wikipedia.org/wiki/Transistor