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process_tech [2013/06/26 04:37] – mcmaster | process_tech [2013/06/26 05:25] – mcmaster | ||
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====== Typical layer dimensions ====== | ====== Typical layer dimensions ====== | ||
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+ | This section prepared initially to better understand typical layer thickness to understand how to improve wet etching processes and to better understand limitations of lapping. | ||
+ | |||
===== Bipolar ===== | ===== Bipolar ===== | ||
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===== CMOS ===== | ===== CMOS ===== | ||
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+ | Samsung KM44C4000J-7 16 Megabit DRAM, Report Number: SCA 9311-300I vertical dimensions: | ||
+ | * Die thickness: 0.3 mm | ||
+ | * Die coat: 9.5 um | ||
+ | * Die coat: "A patterned (to clear bond pads) polyimide die coat was present to protect against alpha particle-induced leakage. Coverage was good." | ||
+ | * Passivation 3: 0.55 um | ||
+ | * Passivation 2: 0.3 um | ||
+ | * Passivation 1: 0.1 um | ||
+ | * M2 (Al): 0.9 um | ||
+ | * Glass 3 ILD: 0.4 um | ||
+ | * Glass 2 ILD: 0.4 um | ||
+ | * Glass 1 ILD: ~0.08 um | ||
+ | * M1 cap: 0.04 um | ||
+ | * M1 (Al): 0.55 um | ||
+ | * M1 barrier: 0.15 um | ||
+ | * Intermediate glass 2: 0.5 um | ||
+ | * Polycide-silicide: | ||
+ | * Polycide-silicide poly 4: ~0.05 um | ||
+ | * Intermediate glass 1: 0.2 um | ||
+ | * Oxide on poly 3: 0.1 um | ||
+ | * Poly 3: 0.1 um | ||
+ | * Capacitor dielectric: ~0.015 um | ||
+ | * Poly 2: 0.15 um | ||
+ | * Interpoly oxide total: 0.35 um | ||
+ | * Interpoly oxide nitride: ~0.04 um | ||
+ | * Poly 1: 0.2 um | ||
+ | * Local oxide (under poly 1): 0.3 um | ||
+ | * Oxide on N+: ~0.08 um | ||
+ | * Oxide on P+: ~0.06 um | ||
+ | * N+ source/ | ||
+ | * P+ source/ | ||
+ | * (likely) N-well: 4.5 um | ||
+ | |||
[Interconnect Scaling] says that ITRS '99 " | [Interconnect Scaling] says that ITRS '99 " | ||
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* 0.8 um process | * 0.8 um process | ||
* Intended use: maybe RF ICs | * Intended use: maybe RF ICs | ||
- | * Inter-Metal Dielectric (IMD): 1.1 um | + | * Inter-Metal Dielectric (IMD) thickness: 1.1 um |
* Metal thickness: 2.1 um or 2.1 um | * Metal thickness: 2.1 um or 2.1 um | ||