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| process_tech [2013/06/26 05:24] – mcmaster | process_tech [2013/06/26 05:25] – mcmaster | ||
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| ====== Typical layer dimensions ====== | ====== Typical layer dimensions ====== | ||
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| + | This section prepared initially to better understand typical layer thickness to understand how to improve wet etching processes and to better understand limitations of lapping. | ||
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| ===== Bipolar ===== | ===== Bipolar ===== | ||
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| ===== CMOS ===== | ===== CMOS ===== | ||
| - | Samsung KM44C4000J-7 16 Megabit DRAM, Report Number: SCA 9311-300I | + | Samsung KM44C4000J-7 16 Megabit DRAM, Report Number: SCA 9311-300I |
| * Die thickness: 0.3 mm | * Die thickness: 0.3 mm | ||
| * Die coat: 9.5 um | * Die coat: 9.5 um | ||
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| * 0.8 um process | * 0.8 um process | ||
| * Intended use: maybe RF ICs | * Intended use: maybe RF ICs | ||
| - | * Inter-Metal Dielectric (IMD): 1.1 um | + | * Inter-Metal Dielectric (IMD) thickness: 1.1 um |
| * Metal thickness: 2.1 um or 2.1 um | * Metal thickness: 2.1 um or 2.1 um | ||