layer
Differences
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| - | ICs are made of many layers. | ||
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| - | ====== Bipolar ====== | ||
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| - | ====== NMOS/PMOS ====== | ||
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| - | ====== CMOS ====== | ||
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| - | ===== Thick metal process ===== | ||
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| - | Looks like its intended for RF ICs. Sample dimensions for 0.8 um process [Thick Metal]: | ||
| - | * Inter-Metal Dielectric (IMD): 1.1 um | ||
| - | * Metal thickness: 2.1 um or 2.1 um | ||
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| - | ====== BiCMOS ====== | ||
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| - | ====== Referneces ====== | ||
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| - | * Thick Metal CMOS Technology on High Resistivity Substrate and Its Application to Monolithic L-Band CMOS LNAs (" | ||
layer.1372220535.txt.gz · Last modified: 2013/10/20 14:59 (external edit)
