layer
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Table of Contents
ICs are made of many layers. The specific number varies greatly depending on the “process technology” used (that is the feature size, features, etc).
Bipolar
NMOS/PMOS
CMOS
Thick metal process
Looks like its intended for RF ICs. Sample dimensions for 0.8 um process [Thick Metal]:
- Inter-Metal Dielectric (IMD): 1.1 um
- Metal thickness: 2.1 um or 2.1 um
BiCMOS
Referneces
- Thick Metal CMOS Technology on High Resistivity Substrate and Its Application to Monolithic L-Band CMOS LNAs (“Thick Metal”, aka we luv long titles): http://etrij.etri.re.kr/pdfdata/21-04-01.pdf
layer.1372220535.txt.gz · Last modified: 2013/10/20 14:59 (external edit)