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Table of Contents
Point-contact transistor
First kind of transistor ever constructed
Bipolar junction transistor (BJT)
Heterojunction bipolar transistor, up to several hundred GHz, common in modern ultrafast and RF circuits
Grown-junction transistor, first kind of BJT
Alloy-junction transistor, improvement of grown-junction transistor
Micro-alloy transistor (MAT), speedier than alloy-junction transistor
Micro-alloy diffused transistor (MADT), speedier than MAT, a diffused-base transistor
Post-alloy diffused transistor (PADT), speedier than MAT, a diffused-base transistor
Schottky transistor
Surface barrier transistor
Drift-field transistor
Avalanche transistor
Darlington transistor
Two BJTs connected together to provide a high current gain equal to the product of the current gains of the two transistors.
Insulated gate bipolar transistors (IGBTs)
use a medium power IGFET, similarly connected to a power BJT, to give a high input impedance. Power diodes are often connected between certain terminals depending on specific use. IGBTs are particularly suitable for heavy-duty industrial applications. The Asea Brown Boveri (ABB) 5SNA2400E170100 illustrates just how far power semiconductor technology has advanced.[18] Intended for three-phase power supplies, this device houses three NPN IGBTs in a case measuring 38 by 140 by 190 mm and weighing 1.5 kg. Each IGBT is rated at 1,700 volts and can handle 2,400 amperes.
Photo transistor
Field-effect transistor
Carbon nanotube field-effect transistor (CNFET)
JFET, where the gate is insulated by a reverse-biased PN junction
MESFET
Similar to JFET with a Schottky junction instead of PN one
High Electron Mobility Transistor (HEMT, HFET, MODFET)
MOSFET
Where the gate is insulated by a shallow layer of insulator
Inverted-T field effect transistor (ITFET)
FinFET
Source/drain region shapes fins on the silicon surface.
FREDFET, fast-reverse epitaxial diode field-effect transistor
Thin film transistor, in LCDs.
OFET Organic Field-Effect Transistor, in which the semiconductor is an organic compound
Ballistic transistor
Floating-gate transistor, for non-volatile storage.
FETs used to sense environment
Ion-sensitive field effect transistor, to measure ion concentrations in solution.
EOSFET, electrolyte-oxide-semiconductor field effect transistor (Neurochip)
DNAFET, deoxyribonucleic acid field-effect transistor
Spacistor
Diffusion transistor
Formed by diffusing dopants into semiconductor substrate; can be both BJT and FET
Unijunction transistor
Can be used as simple pulse generators. They comprise a main body of either P-type or N-type semiconductor with ohmic contacts at each end (terminals Base1 and Base2). A junction with the opposite semiconductor type is formed at a point along the length of the body for the third terminal (Emitter).
Single-electron transistors (SET)
Consist of a gate island between two tunnelling junctions. The tunnelling current is controlled by a voltage applied to the gate through a capacitor.
Nanofluidic transistor
Controls the movement of ions through sub-microscopic, water-filled channels. Nanofluidic transistor, the basis of future chemical processors
Multigate devices
Tetrode transistor
Pentode transistor
Multigate device
Trigate transistors (Prototype by Intel)
Dual gate FETs have a single channel with two gates in cascode; a configuration optimized for high frequency amplifiers, mixers, and oscillators.
Junctionless Nanowire Transistor (JNT)
References
List ripped off of http://en.wikipedia.org/wiki/Transistor